FGL60N100BNTD
Manufacturer:
On Semiconductor
Mfr.Part #:
FGL60N100BNTD
Datasheet:
Description:
IGBTs TO-264-3 Through Hole Single 1 kV 180 W 60 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1 kV |
| Length | 20 mm |
| Width | 5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 26 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Current Rating | 60 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 180 W |
| Power Dissipation | 180 W |
| Max Collector Current | 60 A |
| Collector Emitter Breakdown Voltage | 600 V |
| Reverse Recovery Time | 1.2 µs |
| Continuous Collector Current | 60 A |
| Element Configuration | Single |
| Rise Time | 320 ns |
| Collector Emitter Voltage (VCEO) | 1 kV |
| Max Breakdown Voltage | 1 kV |
| Collector Emitter Saturation Voltage | 1.5 V |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 25 V |
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